2N5087 Transistor
PNP General Purpose Amplifier

2N5109 Transistor
RF & MICROWAVE DISCRETE

2N5172 TRANSISTOR

Transistor Polarity:N Channel

Collector Emitter Voltage V(br)ceo:25V

Power Dissipation Pd:625mW

DC Collector Current:500mA

DC Current Gain hFE:500

Operating Temperature Range:-55°C to +1

2N5401 TRANSISTOR

Transistor Polarity:PNP Collector-to-Emitter Breakdown Voltage:150V

Typ Gain Bandwidth ft:400MHz

Power Dissipation Pd:625mW

DC Collector Current:0.6A

DC Current Gain hFE:60

2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W

2N5087 Transistor
PNP General Purpose Amplifier

2N5109 Transistor
RF & MICROWAVE DISCRETE

2N5172 TRANSISTOR

Transistor Polarity:N Channel

Collector Emitter Voltage V(br)ceo:25V

Power Dissipation Pd:625mW

DC Collector Current:500mA

DC Current Gain hFE:500

Operating Temperature Range:-55°C to +1

2N5401 TRANSISTOR

Transistor Polarity:PNP Collector-to-Emitter Breakdown Voltage:150V

Typ Gain Bandwidth ft:400MHz

Power Dissipation Pd:625mW

DC Collector Current:0.6A

DC Current Gain hFE:60

2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W