Transistor

2N5401 TRANSISTOR

Transistor Polarity:PNP Collector-to-Emitter Breakdown Voltage:150V

Typ Gain Bandwidth ft:400MHz

Power Dissipation Pd:625mW

DC Collector Current:0.6A

DC Current Gain hFE:60

2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W

2N5551 Transistor
Silicon, NPN, 310mW, 180V, 160V, 6V, 600mA, 135>C, 100MHz, 6, 80/250, MOT, TO92-2

2N6031 Transistor
PNP 140V 16A 200W TO-3

2N6476 Transistor
PNP, 4A, 120V, TO220