Fet

BF256B Fet

N-Channel RF Amplifiers

This device is designed for VHF/UHF amplifiers.

BS108G FET
Equivalenti= BSS89 , BSN254A

Max Voltage Vds:200V

On State Resistance:8ohm

Power Dissipation:0.83W

Operating Temperature Range:-55°C to +150°C

Transistor Case Style:TO-92

BSS101 Fet
SIPMOS ® Small-Signal Transistor

N channel

Enhancement mode

Logic Level

VGS(th) = 0.8...2.0V

BSS125 Fet
SIPMOS ® Small-Signal Transistor

N channel

Enhancement mode

Logic Level

VGS(th) = 1.5 ...2.5 V

BSS89 Fet
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.